Design sensitivity analysis and optimization of built-up structures

Developments during the course of the research in design sensitivity analysis and optimization of built-up structures, with both sizing and shape design variables, show clearly that a unified variational approach to design sensitivity analysis can yield derivatives of structural response with respect to design. Rigorous and practically computable results for structural components and built-up structures have been demonstrated and used to solve design optimization problems

Spin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures

We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a three-dimensional topological insulator (TI), as well as from charge current becoming spin-polarized in the direction of transport as it flows from the normal metal (N) across the bulk of the TI slab. Unlike conventional STT in symmetric F'/I/F magnetic tunnel junctions, where only the in-plane STT component is non-zero in the linear response, both the in-plane and perpendicular torque are sizable in N/TI/F junctions while not requiring fixed F' layer as spin-polarizer which is advantageous for spintronic applications. Using the nonequilibrium Born-Oppenheimer treatment of interaction between fast conduction electrons and slow magnetization, we derive a general Keldysh Green function-based STT formula which makes it possible to analyze torque in the presence of SOC either in the bulk or at the interface of the free F layer.Comment: 5 pages, 3 figures, PDFLaTe

Meservey-Tedrow-Fulde effect in a quantum dot embedded between metallic and superconducting electrodes

Magnetic field applied to the quantum dot coupled between one metallic and one superconducting electrode can produce a similar effect as has been experimentally observed by Meservey, Tedrow and Fulde [Phys. Rev. Lett. 25, 1270 (1970)] for the planar normal metal -- superconductor junctions. We investigate the tunneling current and show that indeed the square root singularities of differential conductance exhibit the Zeeman splitting near the gap edge features V = +/- Delta/e. Since magnetic field affects also the in-gap states of quantum dot it furthermore imposes a hyperfine structure on the anomalous (subgap) Andreev current which has a crucial importance for a signature of the Kondo resonance.Comment: 7 pages, 8 figure

Noise at a Fermi-edge singularity

We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-edge singularity

Excitonic Dynamical Franz-Keldysh Effect

The Dynamical Franz-Keldysh Effect is exposed by exploring near-bandgap absorption in the presence of intense THz electric fields. It bridges the gap between the DC Franz- Keldysh effect and multi-photon absorption and competes with the THz AC Stark Effect in shifting the energy of the excitonic resonance. A theoretical model which includes the strong THz field non-perturbatively via a non-equilibrium Green Functions technique is able to describe the Dynamical Franz-Keldysh Effect in the presence of excitonic absorption.Comment: 4 pages in revtex with 5 figures included using epsf. Submitted to Physical Review Letter

Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge

Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light hole-heavy hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well.Comment: 5 figures, 4 page

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples.Comment: 3 pages, 3 figure

High frequency conductivity in the quantum Hall effect

We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz in a two parameter scaling ansatz. For the plateau transition width we find scaling behaviour for both its temperature dependence as well as its frequency dependence. However, the corresponding scaling exponent for temperature kappa=0.42 significantly differs from the one deduced for frequency scaling (c=0.6). Additionally we use the high frequency experiments to suppress the contact resistances that strongly influences DC measurements. We find an intrinsic critical conductivity sigma_c=0.17e^2/h, virtually independent of temperature and filling factor, and deviating significantly from the proposed universal value 0.5e^2/h.Comment: Proceedings of the '14th international conference on high magnetic fields in semiconductor physics' (Semimag-2000) in Matsue, Japa